Multilayer semiconductor device prepn. - by vapour phase deposition of cpds. of 3-B and 5-B elements

摘要

Method of making a window for an electron tube consisting on the one hand of a semiconductive device for photoemission by transmission of radiation in the near infrared, and on the other hand of a means for fixing the device into the electron tube, comprises epitaxially growing the semiconductor material from a mixt. of vapour phase cpds. of formulae R3X and R3'Y, where R is alkyl or phenyl R' is H or R, X is a gp. III-B element and Y is a gp; VB element. The fastening method is as described in the parent patent. The vapour phase deposition method allows a high concn. of Al to be obtd. in a Ga(Al, As) type of semiconductor unlike the method of the parent patent which used a mixt. of liq. and vapour phase epitaxy. A complete multilayer structure can be prepd. with sealing of the substrate of corundum with a 'short' glass.