| 发明名称 |
MESAATYPE SEMICONDUCTOR LASER |
| 摘要 |
PURPOSE:The height of active region limited mesa is set lower than that of support mesa, and residual of insulation film such as SiO2 film is eliminated on the upper surface of active region limited mesa. As a result, the stress applied to the active layer when laser chip is mounted to heat sink can be reduced. |
| 申请公布号 |
JPS52116185(A) |
申请公布日期 |
1977.09.29 |
| 申请号 |
JP19760032581 |
申请日期 |
1976.03.26 |
| 申请人 |
HITACHI LTD |
发明人 |
TAKEDA YUTAKA;NAKAMURA SATOSHI;KANEYA NAOKI;NAKAJIMA HISAO;KURATA KAZUHIRO |
| 分类号 |
H01L23/48;H01S5/00;H01S5/024;H01S5/042;H01S5/20;H01S5/22 |
主分类号 |
H01L23/48 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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