| 发明名称 |
SEMICONDUCTOR RESISTANCE ELEMENT |
| 摘要 |
PURPOSE:To use the PN junction of polycrystalline Si for circuits such as those for bias point setting which require high resistance by using the phenomena by which the PN junction of polycrystalline Si becomes a high resistance at around V = 0 of I - V characteristics. |
| 申请公布号 |
JPS52115192(A) |
申请公布日期 |
1977.09.27 |
| 申请号 |
JP19760031207 |
申请日期 |
1976.03.24 |
| 申请人 |
HITACHI LTD |
发明人 |
MEGURO REI;NAGASAWA KOUICHI |
| 分类号 |
H01L27/04;H01L21/02;H01L21/822;H01L27/06 |
主分类号 |
H01L27/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
