| 摘要 |
<p>PURPOSE:To increase efficiency and responsiveness and prolong service life by making the hole density of a P type layer larger than 2X 10<18>/cm<3> and smaller than 6 X 10<18>/cm<3> at ordinary temperature in an injection type semiconductor light emitting element formed with a PN jucnction with a P type Ga1-XxAlxAs layer and an N type Ga1-yAlyAs.</p> |
