| 发明名称 |
MIS TYPE SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To obtain a MIS type semiconductor device for memory by mounting an electrode to a window for forming a source zone through a Ti-based insulating film and providing a capacity element thereto. |
| 申请公布号 |
JPS52113181(A) |
申请公布日期 |
1977.09.22 |
| 申请号 |
JP19760029239 |
申请日期 |
1976.03.19 |
| 申请人 |
HITACHI LTD |
发明人 |
IWAMATSU SEIICHI;HIROBE YOSHIMICHI;TANIGAKI YUKIO |
| 分类号 |
H01L27/10;H01L21/8242;H01L27/108 |
主分类号 |
H01L27/10 |
| 代理机构 |
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代理人 |
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