| 发明名称 |
SEMICNODUCTOR DEVICE |
| 摘要 |
PURPOSE:To avoid the formation of an eutectic crystal of gold and Si by forming an insulating film in a zone in the outer peripheral direction of an annular ring layer and forming on its upper surface a gold layer connected to the annular ring layer. |
| 申请公布号 |
JPS52113171(A) |
申请公布日期 |
1977.09.22 |
| 申请号 |
JP19760029235 |
申请日期 |
1976.03.19 |
| 申请人 |
HITACHI LTD |
发明人 |
ASHIKAWA KAZUTOSHI;KATOU HIROSHI |
| 分类号 |
H01L29/417;H01L21/331;H01L29/43;H01L29/73;H01L29/74 |
主分类号 |
H01L29/417 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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