| 摘要 |
<p>1486758 Aluminium gallium arsenide COMINCO Ltd 18 June 1976 [20 June 1975] 25286/76 Heading C1A The stability of crystals of formula Al 1-x Ga x As wherein X = 0À02-0À30 is improved by annealing the crystals at a temperature of at least 700‹ C, preferably 800-1050‹ C, in the presence of arsenic vapour. The arsenic vapour pressure is typically lkg/cm<SP>2</SP> and annealing is continued for a period of 1-3 days. Crystals in which X = 0À15-0À30 may be prepared by adding Al and As to a bath of molten Ga and slowly cooling the bath. Crystals in which X is 0À02-0À15 may be prepared by heating Al and Ga at temperatures of 1000-1050‹ C under As vapour may the quartz ampule while maintaining a temperature gradient along the charge.</p> |
