PROTECTION CIRCUIT FOR MOS DRIVER

摘要

An insulated-gate field effect transistor (IGFET) driver circuit, incorporated in a MOS chip, has a clamping capacitor connected through a switching device to the gate electrode of the driver IGFET when the chip is energized to minimize voltage feedback across the IGFET drain-to-gate capacitance (CDG). When the chip is de-energized, the switching device isolates the clamping capacitor from the gate electrode to enhance the voltage feedback across CDG to protect the driver IGFET from static charges applied to the drain (output) electrode thereof.