| 摘要 |
A body of semiconductor material of an electroluminescent device is on a gallium arsenide substrate of N type conductivity. The body includes a first region of N type conductivity aluminum gallium arsenide contiguous to a surface of the substrate and a second region of silicon doped P type gallium arsenide on the first region and spaced from the substrate. The P-N junction between the first and second regions is a heterojunction, and is the only heterojunction with the second region. The second region is of a thickness, extending from the P-N junction, in the range of 50 to 200 micrometers. The electroluminescent device is capable of transient response time of 0.2 microseconds or less.
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