| 发明名称 |
COMPLEMENTED MOS INTEGRATED CIRCUIT |
| 摘要 |
PURPOSE:To improve the degree of integration of C-MOS by forming second conductive area on first conductive semi-conductor base, providing first conductive channel wherein, and also providing second conductive channel on another part of the base. |
| 申请公布号 |
JPS52111387(A) |
申请公布日期 |
1977.09.19 |
| 申请号 |
JP19760028354 |
申请日期 |
1976.03.16 |
| 申请人 |
NIPPON ELECTRIC CO |
发明人 |
OOTA KUNIKAZU;IKESHIMA HIROSHI;SHIMIZU KIYOUZOU |
| 分类号 |
H01L21/8238;H01L27/092;H01L29/78 |
主分类号 |
H01L21/8238 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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