| 摘要 |
PURPOSE: To form a buried P<+> -type sub-collector having a self-aligning reach through, by using a semiconductor device having a P-type well and a low- temperature epitaxial flattening technique. CONSTITUTION: The ion of an N-type dopant is forced into a substrate 10 composed of a P-type semiconductor material in which an N<+> -type sub-collector 12 is formed by implanting the ion of the N-type dopant into the substrate 10, by annealing the substrate 10 in an argon gas. Then, P-type well areas are formed by growing N-type epitaxial layers 14 on the sub-collector layer 12 and a pad oxide 15 on the layers 14, and nitride layers 17 are stuck to the well area. After the nitride layers 17 are formed, the P-type well areas are patterned by using a photoresist etching mask, and the sub-collector layer 12 is stored by executing reactive ion etching through the epitaxial layer 14. Then, layers 16 and 18 of low-temperature epitaxial materials are grown on the entire upper surface of a structure by chemical vapor deposition. Therefore, a buried P<+> -type sub-collector having a self-aligning reach through can be formed. |
