| 摘要 |
The novel semiconductor device comprises a body made of semiconductor material having at least two regions of opposite conductivity type. Between the regions of opposite conductivity type there is a P-N junction. An end part of at least one P-N junction is exposed on the surface of the body and has a layer of protective coating material directly on the surface of the body and the exposed end part. The protective coating material is a cured reaction product of a silicon-free organic diamine, an organic tetracarboxylic dianhydride and a polysiloxane containing amine terminal groups. It contains repetitive structural units of the following formula: <IMAGE> containing 15 to 40 mol% of intercondensed structural units of the following formula <IMAGE> R, R', R'', Q, x, n and m are defined in the preceding Patent Claim 1. |
