| 摘要 |
PURPOSE:To speed up charging of a load capacitor by means of a bipolar transistor(TR) by adding an N-channel MOS TR whose drain is connected to a high level voltage source, whose source is connected to the base of the bipolar TR and whose gate is connected to an input terminal respectively. CONSTITUTION:When a high level is applied to an input terminal IN, an N- channel MOS TR M6 is turned on synchronously with an input signal, a current flows from a high level voltage source VDD to the base of a bipolar TR Q1 to turn on the bipolar TR Q1. Thus, the bipolar TR Q1 is turned on quickly more than the case of the turning-on of the bipolar TR Q1 when a P-channel MOS TR M3 is turned on after the inversion of a CMOS inverter by the TRs M1, M2. After the P-channel MOS TR M3 is turned on, the base current of the bipolar TR Q1 is supplied by two TRs as N-channel MOS TR M6 and P-channel MOS TR M3. Thus, the base current supply capability to the bipolar TR Q1 is increased. |
