发明名称 FORMING OF PHOTO RESIST PATTERN
摘要 PURPOSE:To form the resist pattern having different thickness by using the photo mask being composed with the pattern layer with differnt penetration mass to the fixed wave length of light.
申请公布号 JPS52109372(A) 申请公布日期 1977.09.13
申请号 JP19760025774 申请日期 1976.03.10
申请人 NIPPON ELECTRIC CO 发明人 URAI HARUO
分类号 H01L21/027;H01L21/302 主分类号 H01L21/027
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