| 摘要 |
<p>The invention provides a new and improved means of pre setting and regenerating a dynamic MOS memory store, whereby the use of punched cards or a magnetic tape to load the store under programme control is obviated. The circuit arrangement incorporates a regenerating address counter, a continuous signal flip-flop, a control and timing circuit, a line address selector, a column address selector and a write data register. A voltage supply instrument actuates a time control impulse generator which delivers impulses to the regenerating address counter. When the latter emits signals, binary zeroes are input simultaneously into all the storage cells of the memory through the line and column address selectors.</p> |
