| 发明名称 |
NONNVOLATILE SEMICONDUCTOR MEMORY UNIT AND ITS DRIVE |
| 摘要 |
PURPOSE:To obtain the non-volatile memory unit by providing the area of the same conductive type as the source area directly under the gaps where the gate electrodes mutually insulated is provided on the gate insulating film of EET as fixed. |
| 申请公布号 |
JPS52107778(A) |
申请公布日期 |
1977.09.09 |
| 申请号 |
JP19760016780 |
申请日期 |
1976.02.17 |
| 申请人 |
NIPPON ELECTRIC CO |
发明人 |
SUKIBUCHI KIYOSHI;KUROKI KOUREI |
| 分类号 |
H01L27/112;G11C16/04;G11C17/00;H01L21/8246;H01L21/8247;H01L29/768;H01L29/788;H01L29/792 |
主分类号 |
H01L27/112 |
| 代理机构 |
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代理人 |
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| 地址 |
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