VERFAHREN ZUR KONTROLLE DER BEARBEITUNG EINES PIEZOELEKTRISCHEN PLAETTCHENS DURCH IONENBESCHUSS

摘要

The present invention relates to the monitoring of the machining of a wafer of piezoelectric material by a beam of charged particles. The monitoring method is performed by measuring and displaying the complex voltage-current relationship produced by the electrical excitation of the wafer using a variable-frequency measuring signal applied to electrodes carried by the wafer.