| 发明名称 |
Bipolar transistor structure having low saturation resistance |
| 摘要 |
A triple diffused interdigitated NPN transistor formed in an isolated N-epitaxial pocket of an otherwise standard NPN bipolar junction isolated integrated circuit. The N-type diffused collector pocket in the N-epitaxial layer lowers collector resistance of the triple diffused NPN device.
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| 申请公布号 |
US4047220(A) |
申请公布日期 |
1977.09.06 |
| 申请号 |
US19750644338 |
申请日期 |
1975.12.24 |
| 申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
FERRO, ARMAND P.;KURZ, DECEASED, BRUNO F. |
| 分类号 |
H01L29/73;H01L21/331;H01L21/8222;H01L27/06;H01L27/082;(IPC1-7):H01L27/10 |
主分类号 |
H01L29/73 |
| 代理机构 |
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