Double heterostructure lasers having reduced microstress

摘要

A conventional construction of light emissive III-V semiconductor device is modified by the inclusion in the active region of the device of not more than 5 atomic percent of a group III or group V substituent of significantly different atomic radius than that of the element for which it is substituted. The microstress field in the neighborhood of dislocation in the active region produces local modification of the concentration of the substituent causing a reduction in the magnitude of the microstress field associated with these dislocations.