发明名称 |
SEMICONDUCTOR UNIT |
摘要 |
PURPOSE:To provide a layer to reduce the carrier injection from the emitter on the emitter/base conjuction surface except the specified area immediately under the collector region, thus obtaining a I<2>L of which effective emitter/base conjunction and which has an improved inverter current amplifying ratio and greater shield frequency to ensure high speed operation. |
申请公布号 |
JPS52104082(A) |
申请公布日期 |
1977.09.01 |
申请号 |
JP19760020893 |
申请日期 |
1976.02.27 |
申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
MASUOKA FUJIO;IIZUKA TETSUYA |
分类号 |
H01L21/8226;H01L21/331;H01L27/02;H01L27/082;H01L29/73 |
主分类号 |
H01L21/8226 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|