发明名称 SEMICONDUCTOR UNIT
摘要 PURPOSE:To provide a layer to reduce the carrier injection from the emitter on the emitter/base conjuction surface except the specified area immediately under the collector region, thus obtaining a I<2>L of which effective emitter/base conjunction and which has an improved inverter current amplifying ratio and greater shield frequency to ensure high speed operation.
申请公布号 JPS52104082(A) 申请公布日期 1977.09.01
申请号 JP19760020893 申请日期 1976.02.27
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 MASUOKA FUJIO;IIZUKA TETSUYA
分类号 H01L21/8226;H01L21/331;H01L27/02;H01L27/082;H01L29/73 主分类号 H01L21/8226
代理机构 代理人
主权项
地址