| 发明名称 |
SEMICONDUCTOR RESISTOR ELEMENT |
| 摘要 |
PURPOSE:To decrease the current density given by the static electricity in order to prevent electrostatic breakdown, by preparing the high resistant area on the outside of the resistant area which is formed within the semiconductor base board. |
| 申请公布号 |
JPS52103979(A) |
申请公布日期 |
1977.08.31 |
| 申请号 |
JP19760020750 |
申请日期 |
1976.02.26 |
| 申请人 |
NIPPON ELECTRIC CO |
发明人 |
TANAKA KOUICHI;NISHIMURA EITETSU;OOTA MICHIHIRO;ANDOU TSUYOSHI |
| 分类号 |
H01L27/04;H01L21/822;H01L29/8605 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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