发明名称 SEMICONDUCTOR TARGET FOR IMAGE INTENSIFIER
摘要 An X-ray image intensifier tube having a target and a number of regularly arranged diodes which, on the side bombarded by the electrons, has a deep diffused phosphorus n+ layer which is covered with a metal buffer layer, comprising a layer of a material having a low atomic number, for example beryllium, and a layer of a material having a comparatively large density, for example, niobium, is preferably present between said layer and the said n+ layer which, under the influence of the incident electrons, mainly emits L.alpha. X-ray radiation which is strongly absorbed in the n+ layer.
申请公布号 JPS52102623(A) 申请公布日期 1977.08.29
申请号 JP19770017859 申请日期 1977.02.22
申请人 PHILIPS CORP 发明人 ARAN IBAN KAARUSON;BARII MANA SHINGAA
分类号 H01J31/49;H01J29/44;H01J31/36;H01J35/08;H01L31/04;H01L31/10;H01L31/14;H01L49/00;H05G1/02 主分类号 H01J31/49
代理机构 代理人
主权项
地址