| 摘要 |
PURPOSE:To obtain a semiconductor device, which is very strong against a heat cycle, by a method wherein the insulating plate and the heat dissipation plate of the device are bonded together through a solder consisting of a lead-tin alloy having the weight ratio of lead to tin within a specified range. CONSTITUTION:A semiconductor device consists of a semiconductor driving element 2, by which an actuator and the like are driven, an insulating plate 60 bonded directly to the above element 2 through a solder 3 or through the solder 3, a heat dissipation plate 40 and a solder 5 and a metal heat dissipation plate 80 bonded to the above plate 60 through a solder 7 consisting of a lead-tin alloy having the weight ratio of lead to tin=50+ or -5:50 - or + 5. For example, a semiconductor element 2 and a molybdenum plate 40 of a power switch semiconductor part 110 of an igniting device using a semiconductor and for internal combustion engine use are bonded together through a Pb/Sn/Ag alloy solder 3 (a weight ratio of 93.5/5/1.5), which is called a high-temperature solder, and the plate 40, an alumina plate 60 and a heat dissipation plate 80 are bonded together through solders 5 and 7 consisting of a lead-tin alloy having the weight ratio of lead to tin = 50+ or -5:50 - or + 5. |
