| 摘要 |
A random access type semiconductor memory comprises a pair of data line halves arranged in parallel, a plurality of word lines orthogonal to the data line halves, a multiplicity of memory cells, each of which is arranged at either one of the cross points between the data line halves and each of the word lines, a differential amplifier to which signals on the data line halves are differentially applied, and a main amplifier to which output signals on the data line halves are differentially applied, thereby detecting the content of a desired memory cell.
|
