发明名称 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
摘要 <p>PURPOSE:To increase the charging capability of a level of a bit line by providing an N-channel MOS transistor (TR) whose gate connects to an output of a reference voltage generating circuit brought into the operating state for a prescribed time and whose drain connects to a power supply. CONSTITUTION:An N-channel MOS TR Q6 whose gate connects to an output F of a reference voltage generating circuit 3 brought into the operating state for a prescribed time and whose drain connects to a power supply is provided. When a bit line is selected by signals a1, a2 first of all, N-channel TRs Q3, Q6 charge the bit line to a prescribed level through N-channel TRs Q4, Q5. In this case, the TRs charging the bit line are not only the N-channel TR Q3 but only the N-channel TR Q6, then the charging of the bit line is quickened by the TR Q6. Thus, the bit line charging time is reduced.</p>
申请公布号 JPH0330193(A) 申请公布日期 1991.02.08
申请号 JP19890167804 申请日期 1989.06.28
申请人 MITSUBISHI ELECTRIC CORP 发明人 MAKIHARA HIROYASU;KODA KENJI;KOROGI YASUHIRO
分类号 G11C17/00;G11C16/06 主分类号 G11C17/00
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