| 发明名称 |
GERMANIUM ENTHALTENDER SILICIUMNITRIDFILM |
| 摘要 |
A germanium-containing silicon nitride film has a germanium content of 0.5 to 10 atomic-% that of the silicon content. Since the film has a much smaller stress than a conventional silicon nitride (Si3N4) film, it is very suitable as a mask for fabricating a semiconductor device and an insulating or a protective film for a semiconductor device. |
| 申请公布号 |
DE2705902(A1) |
申请公布日期 |
1977.08.18 |
| 申请号 |
DE19772705902 |
申请日期 |
1977.02.11 |
| 申请人 |
HITACHI,LTD. |
发明人 |
TAMAKI,YOICHI;ISOMAE,SEIICHI;KOKUBUNJI,TOKIO;OGIRIMA,MASAHIKO;SHINTANI,AKIRA;MAKI,MICHIYOSHI |
| 分类号 |
H01L21/318;H01L21/32;(IPC1-7):H01L21/318 |
主分类号 |
H01L21/318 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
