| 摘要 |
<p>METHOD FOR FABRICATING A SEMICONDUCTOR MEMORY DEVICE An SI1I2M (semiconductor-insulator1-insulator2-metal) memory structure, containing a dopant such as tungsten or molybdenum concentrated in a region centered at the interface ("I1I2") between the I1 and I2 layers, is fabricated by depositing an oxide of the dopant, such as tungsten trioxide or molybdenum trioxide, on the I1 layer prior to fabricating the I2 layer. The oxide of the dopant can be advantageously deposited by means of reactive evaporation.</p> |
