发明名称 Method for the production of films having the desired configuration
摘要 A method for the production of films having the desired geometrical form (configuration) comprising depositing an electromagnetic radiation-sensitive system, which consists of a metal layer and an inorganic compound layer capable of reacting with said metal layer and forming interaction products under the effect of electromagnetic radiation, onto a film made from a material which does not react, on being irradiated, with the layer of said system that adjoins said film; subjecting said system to selective irradiation in conformity to the desired configuration, followed by carrying out the selective etching of the irradiated system so as to obtain the requisite configuration, and thereafter using said etched system as a mask for etching selectively said film in order to impart thereto the sought-for geometrical form.
申请公布号 US4042450(A) 申请公布日期 1977.08.16
申请号 US19730422925 申请日期 1973.12.07
申请人 VOITOVICH, IGOR DANILOVICH;KOSTYSHIN, MAXIM TIMOFEEVICH;MIKHAILOVSKAYA, EKATERINA VASILIEVNA;PETROV, VYACHESLAV VASILIEVICH;ROMANENKO, PETR FEDOROVICH;SKURIDIN, VLADIMIR PETROVICH 发明人 VOITOVICH, IGOR DANILOVICH;KOSTYSHIN, MAXIM TIMOFEEVICH;MIKHAILOVSKAYA, EKATERINA VASILIEVNA;PETROV, VYACHESLAV VASILIEVICH;ROMANENKO, PETR FEDOROVICH;SKURIDIN, VLADIMIR PETROVICH
分类号 C23F1/02;G03C1/705;G03F7/004;H01L21/00;H01L21/314;H01L49/02;H05K3/06;(IPC1-7):C23F1/02 主分类号 C23F1/02
代理机构 代理人
主权项
地址