发明名称 VERFAHREN ZUR UMWANDLUNG VON POLYKRISTALLINEM HALBLEITERMATERIAL IN MAKROKRISTALLINES HALBLEITERMATERIAL
摘要 <p>Polycrystalline semiconductor strips are transformed into single crystals by producing by a laser beam a fusion zone in a region which is narrow compared with the strip width. A part of this zone is solidified to a crystal and as the fusion zone is extended along the strip, the single crystal also expands. Process is reliable and economical and no seed crystal is needed.</p>
申请公布号 DE2704549(A1) 申请公布日期 1977.08.11
申请号 DE19772704549 申请日期 1977.02.03
申请人 MOTOROLA,INC. 发明人 BAGHDADI,ASLAN;WARREN GURTLER,RICHARD
分类号 C30B13/00;C30B13/06;C30B13/22;C30B29/64;H01L21/208;H01L31/04;(IPC1-7):B01J17/16 主分类号 C30B13/00
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