发明名称 |
VERFAHREN ZUR UMWANDLUNG VON POLYKRISTALLINEM HALBLEITERMATERIAL IN MAKROKRISTALLINES HALBLEITERMATERIAL |
摘要 |
<p>Polycrystalline semiconductor strips are transformed into single crystals by producing by a laser beam a fusion zone in a region which is narrow compared with the strip width. A part of this zone is solidified to a crystal and as the fusion zone is extended along the strip, the single crystal also expands. Process is reliable and economical and no seed crystal is needed.</p> |
申请公布号 |
DE2704549(A1) |
申请公布日期 |
1977.08.11 |
申请号 |
DE19772704549 |
申请日期 |
1977.02.03 |
申请人 |
MOTOROLA,INC. |
发明人 |
BAGHDADI,ASLAN;WARREN GURTLER,RICHARD |
分类号 |
C30B13/00;C30B13/06;C30B13/22;C30B29/64;H01L21/208;H01L31/04;(IPC1-7):B01J17/16 |
主分类号 |
C30B13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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