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发明名称
MISFET CIRCUIT
摘要
PURPOSE:To enahnce the integration rate for MISFET circuit used for level conversion, etc., by reducing the occupied area with simplification of the circuit.
申请公布号
JPS5294743(A)
申请公布日期
1977.08.09
申请号
JP19760010363
申请日期
1976.02.04
申请人
HITACHI LTD
发明人
TORII SHIYUUICHI;NARITA KAZUTAKA;OOBA KENICHI;ARAI TAMOTSU
分类号
H03K19/0185;H03K5/02;H03K19/096
主分类号
H03K19/0185
代理机构
代理人
主权项
地址
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