发明名称 High voltage deep diode power semiconductor switch
摘要 A semiconductor switch is a lamellar body of semiconductor material having two major opposed surfaces and at least one group of four regions of alternate type conductivity. At least three of the four regions have recrystallized semiconductor material having a solid solubility of metal therein to impart the type conductivity thereto. Each of the first and third regions have the same type conductivity but different levels of impurity concentration. Each of the second and fourth regions have the same type conductivity but different levels of impurity concentration.
申请公布号 US4040869(A) 申请公布日期 1977.08.09
申请号 US19760678293 申请日期 1976.04.19
申请人 GENERAL ELECTRIC COMPANY 发明人 ANTHONY, THOMAS R.;CLINE, HARVEY E.
分类号 H01L21/24;H01L21/329;H01L29/04;H01L29/87;(IPC1-7):H01L7/00;H01L29/00;H01L29/74;H01L23/32 主分类号 H01L21/24
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