| 发明名称 |
MANUFACTURE FOR SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To obtain semiconductor which has no increase in a leak current and no voltage drop by H2O penetrating into the semiconductor, by ion-plating by the use of a desorptionable metal mask. |
| 申请公布号 |
JPS5293270(A) |
申请公布日期 |
1977.08.05 |
| 申请号 |
JP19760009318 |
申请日期 |
1976.02.02 |
| 申请人 |
HITACHI LTD |
发明人 |
FUYAMA TAKAAKI;ASAI OSAMU |
| 分类号 |
H01L29/872;H01L21/265;H01L29/47 |
主分类号 |
H01L29/872 |
| 代理机构 |
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代理人 |
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| 地址 |
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