| 发明名称 |
MANUFACTURE FOR SEMICONDUCTOR INTEGRATED CIRCUIT |
| 摘要 |
PURPOSE:To eliminate the stage difference and the disconnection by selecting and forming an anti-heat oxidation layer on the semiconductor base plate with the mask combined with the diffusion pattern for a self and non-self-matching, by heat-filming the other part and by leading-in of the impurity in order of nonself and self one. |
| 申请公布号 |
JPS5293282(A) |
申请公布日期 |
1977.08.05 |
| 申请号 |
JP19760009870 |
申请日期 |
1976.01.30 |
| 申请人 |
MATSUSHITA ELECTRONICS CORP |
发明人 |
OKUMURA TOMISABUROU;OKAZAKI HIROSHI;TSUCHITANI AKIRA |
| 分类号 |
H01L21/30;H01L21/027;H01L21/283;H01L21/31;H01L21/32;H01L21/3205;H01L21/336;H01L21/762;H01L21/8234;H01L23/52;H01L29/78 |
主分类号 |
H01L21/30 |
| 代理机构 |
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代理人 |
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| 地址 |
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