发明名称 SEMICONDUCTOR MEMORY UNIT
摘要 PURPOSE:To make easy the detection of the number of carriers in the floating gate, to shorten the write-in time, and to enable the erasing of electrical memory, by a memory transistor using 3 layered electrode constitution.
申请公布号 JPS5292441(A) 申请公布日期 1977.08.03
申请号 JP19760008392 申请日期 1976.01.30
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 IIZUKA HISAKAZU
分类号 H01L21/8247;G11C11/404;H01L29/788;H01L29/792 主分类号 H01L21/8247
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