| 摘要 |
<p>1455811 Semi-conductor devices RAYTHEON CO 5 March 1975 [1 April 1974] 9170/75 Heading H1K [Also in Division H3] A negative resistance avalanche diode comprises a semi-conductor body with three regions 13-15 of the same conductivity type, and a further region 12 producing a rectifying junction with the first region 13, wherein a charge carrier avalanche is produced in the first region 13, the third region 15 is a drift region and the second region 14 separates the first and third regions 13, 15 which have a doping density of 2 x 10<SP>15</SP> to 3 x 10<SP>16</SP> atoms per cm.<SP>3</SP> The avalanche may be produced by a PN junction as shown or by a Schottky barrier and a recombination region 16 may be provided. The semiconductor may be Si and the Schottky contacts Au or Pt. The diode may be incorporated in an integrated circuit in a substrate which bears microskip conductors forming LC filters and a microwave circulator. Such a microwave amplifier and a diode packaged in a resonant cavity are described.</p> |
