| 摘要 |
1,069,941. Oxide film resistors. SOCIETE D'ELECTRONIQUE ET D'AUTOMATISME. May 20, 1965 [June 2, 1964], No. 21W/65. Headings H1K and H1S. A resistor comprises a film of tin oxide doped with P-type impurity deposited on a dielectric substrate. The P-type impurity compensates for the N-type semi-conductivity of the tin oxide. The resistor is produced by atomizing a mixture of solutions containing tin chloride and aluminium chloride so that the mist passes up inside an oven on to the substrate where it is pyrolized into tin oxide. Indium, gallium and boron are also mentioned as preferred impurities. |
