发明名称 Integrated circuit having guard ring Schottky barrier diode and method
摘要 Integrated circuit having a guard ring Schottky barrier diode therein in which first and second layers of metallization are provided overlying the Schottky barrier diode which are brought into intimate contact with the interconnect surface to establish intimate contact between the surface of the semiconductor body and the metallization.
申请公布号 US4035907(A) 申请公布日期 1977.07.19
申请号 US19750543130 申请日期 1975.01.22
申请人 SIGNETICS CORPORATION 发明人 ALLEN, RICHARD J.;SHIELDS, MICHAEL A.
分类号 H01L27/07;H01L29/00;H01L29/872;(IPC1-7):B01J17/00 主分类号 H01L27/07
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