发明名称 Multi-layered substrate for a surface-acoustic-wave device
摘要 This invention provides a multi-layered substrate for a surface-acoustic-wave device which substrate comprises a piezoelectric layer on a base, the temperature coefficient of a phase velocity of the surface-acoustic-wave in the piezoelectric layer being different from that of the base, the piezoelectric layer having a thickness less than a wavelength of the SAW. This multi-layered substrate can have a large electromechanical coupling and controlled temperature coefficient of the phase velocity.
申请公布号 US4037176(A) 申请公布日期 1977.07.19
申请号 US19760667374 申请日期 1976.03.16
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 ONO, SHUSUKE;WASA, KIYOTAKA;HAYAKAWA, SHIGERU
分类号 H03H9/02;(IPC1-7):H03H9/30;H01L27/20;H03H9/26 主分类号 H03H9/02
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