| 发明名称 |
MASK ALIGNING METHOD FOR XXRAY EXPOSURE |
| 摘要 |
PURPOSE:To improve aligning accuracy by performing amsk aligning using light which is more readily transmittable through semicondcutor wafers and masks than X-rays for exposure. |
| 申请公布号 |
JPS5286778(A) |
申请公布日期 |
1977.07.19 |
| 申请号 |
JP19760003408 |
申请日期 |
1976.01.14 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
JINNO KIYOKATSU |
| 分类号 |
H01L21/027;H01L21/302 |
主分类号 |
H01L21/027 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
