METHOD OF PRODUCING MMO TRANSISTOR

摘要

The transistor is selectively biased, so that high energy charges are generated in at least a part of the channel zone. A voltage is applied to the control electrode (25), so that a part of high energy charges of a certain polarity are injected into the control electrode-insulator (24) of the initial MNOST, and held there. An inversion layer is produced in a part of the channel, and the transconductance of the transistor is changed to the new required value.