Modification of semiconductor esp. silicon sheet crystal structure - by zone melting gives sheet suitable for making solar cell

摘要

Modification of the crystal structure of a semiconductor sheet is carried out by producing a melt zone across it and making this travel in a direction parallel to the opposite edges. Si sheets suitable for direct use for making solar cells can be made from cheap polycrystalline material. Pref. the width of the melt zone is 3-10 times the thickness of the sheet and it is produced by moving the sheet past a heat source. The procedure can be repeated with the melt zone travelling in the opposite direction, parallel to the long edges of the sheet.