| 发明名称 |
SI GATE COMPLEMENTARY TYPE MOS SEMICONDUCTOR |
| 摘要 |
PURPOSE:The scale of integration of an Si gate C-MOS semiconductor device is increased by directly connecting the gate of a P type MOS to the gate of an N type MOS. |
| 申请公布号 |
JPS5284980(A) |
申请公布日期 |
1977.07.14 |
| 申请号 |
JP19760000781 |
申请日期 |
1976.01.07 |
| 申请人 |
HITACHI LTD |
发明人 |
KOSA YASUNOBU;MEGURO RIYOU;NAGASAWA KOUICHI |
| 分类号 |
H01L21/8238;H01L27/092;H01L29/78 |
主分类号 |
H01L21/8238 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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