发明名称 |
Pressure sensitive field effect device |
摘要 |
A pressure sensitive field effect semiconductor device which is one element of an integrated array is disclosed. The device employs a layer of elastomer material located substantially between the gate and the current carrying channel, to effectuate the conversion of a longitudinal pressure variation to an electrical variation. The device may inherently include amplification of the electrical variation. One use for the device is in an acoustic wave detector array.
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申请公布号 |
US4035822(A) |
申请公布日期 |
1977.07.12 |
申请号 |
US19750558470 |
申请日期 |
1975.03.14 |
申请人 |
RCA CORPORATION |
发明人 |
VILKOMERSON, DAVID HERMAN RAPHAEL |
分类号 |
H01L29/51;H01L29/84;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/51 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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