| 摘要 |
1,121,788. Microwave oscillators. INTERNATIONAL BUSINESS MACHINES CORP. 19 July, 1967 [30 Sept., 1966], No. 33061/67. Heading H3T. [Also in Division H1] A microwave oscillator employs a transistor (preferably field-effect) having a coupled pair of resonant transmission lines distributed along the length of the transistor. The equivalent circuit is shown in Fig. 5, one line of each pair (Q, Q<SP>1</SP>) being attached to the source electrode and the others (G, S) to the gate and drain respectively. The necessary feedback is provided by the gate-source capacitance C GS and an output is taken at 54. In the preferred construction, Fig. 7, the electrodes (Q, G, S) are formed as strips extending across a piece of semi-conductor material 71 on an insulating substrate 70 of GaAs or Al 2 O 3 The layer 71 is epitaxially deposited and may be N-type GaAs, InSb, Si or Ge. Electrodes Q and S may be of A1 forming ohmic contacts while G is of Au or Mo to provide a Schottky barrier. At their ends the electrodes are formed into enlarged plates 72-74 separated by insulating material, e.g. SiO 2 , to comprise the capacitors C 1- C 4 (Fig. 5). The source electrode Q is extended over the other two to provide the second line of each transmission line. The transistor may also be of the insulated gate MOS type. |
