| 摘要 |
1280656 Active reactances WANDEL U GOLTERMANN 18 Nov 1969 [27 Nov 1968] 56306/69 Heading H3R An active reactance of the type comprising a transistor with two electrodes excited in quadrature is characterized in that the transistor is a double-gate FET with a control signal applied to one gate, and the phase shift network connected to the other. In one embodiment, the resistive arm of the potential divider comprises two transistors 10, 11 connected as a current source. Reference has been directed by the Comptroller to Specification 1,109,891. |
