Gas phase epitaxy process for semiconductor growth - using concentrated light source in purificn. and heating of substrate surface, suppressing diffusion

摘要

In a gas phase epitaxy process for the growth of semiconductor layers, the substrate is first purified from a defective layer and heated to the critical epitaxial temp., purificn. and heating taking place with simultaneous action of a luminous flux of 101-104 W/cm2 and supply of the substance of the layer being grown. A monocrystalline layer with good structural properties is obtd. and diffusion between this and the substrate is suppressed, so that abrupt junctions are obtd. The substrate surface opposite the illuminated surface is cooled enough to prevent diffusion. The appts. has a quartz cell contg. a vapour source, substrate holder, window for introducing neutral or reducing agent and oven. There is an external light source, the cell wall between this and the substrate consisting of optically transparent quartz.