发明名称 CHARGE TRANSFER DEVICE
摘要 PURPOSE:To improve the charge transfer efficiency of a zigzag channel CCD by burying a poly Si layer connected to the charge dams within the insulating film on the surface of a substrate and electrically connecting a pair of the charge dams.
申请公布号 JPS5282080(A) 申请公布日期 1977.07.08
申请号 JP19750156874 申请日期 1975.12.29
申请人 FUJITSU LTD 发明人 OOTSUKI OSAMU
分类号 H01L29/762;H01L21/339;H01L29/768 主分类号 H01L29/762
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