| 摘要 |
1479154 Lasers; ohmically contacting semiconductor devices WESTERN ELECTRIC CO Inc 3 Dec 1974 [3 Dec 1973] 52162/74 Headings H1C and H1K [Also in Division C4] A semiconductor device is made by contacting at a temperature of 700-850� C. a body consisting of one or more A 111 B v compounds with a solution comprising gallium, gallium arsenide and 20-50 atomic per cent germanium, reducing the temperature of the liquid-solid interface by at least 0�5� C. to epitaxially deposit a P type layer with a carrier concentration of at least 3�5 x 10<SP>19</SP>/cc and applying a metal layer to the P type layer to form an ohmic contact therewith. Deposition preferably starts at 800� C. and is continued to provide a layer 0�5-25� thick on which a composite electrode layer of chromium or titanium overlain with gold is conventionally deposited. A method of constructiong a heterojunction laser on a (100) oriented N + GaAs substrate is described using four different solutions to provide intermediate layers of GaAlAs and finally the P type contact layer. |
