| 发明名称 |
PREPARATION OF THIN FILM SILICON SINGLE CRYSTAL PLATE |
| 摘要 |
PURPOSE:To fabricate a thin film-like single crystal plate by forming an epitaxial thin layer on a Si single crystal substrate by means of electrolytic etching. |
| 申请公布号 |
JPS5280776(A) |
申请公布日期 |
1977.07.06 |
| 申请号 |
JP19750156763 |
申请日期 |
1975.12.27 |
| 申请人 |
SUWA SEIKOSHA KK |
发明人 |
HARIGAI HIROSHI |
| 分类号 |
H01L31/04;H01L21/20;H01L21/205;H01L21/306;H01L21/3063 |
主分类号 |
H01L31/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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