Adhesive-free process for bonding a semiconductor crystal to an electrically insulating, thermally conductive stratum

摘要

A broad silver coated direct band-gap semiconductor crystal is bonded to a sapphire face plate without using any adhesive by a process of positioning the crystal with a broad surface against the sapphire, and bombarding the crystal with an electron beam raster scanned over the breadth of the crystal until the crystal and sapphire become bonded together.